Samsung has announced new development in flash chip technology that has the potential to be a boon for mobile users. The new phase-change random access memory (PRAM) is novolatile (it’ll hang on to your data when the power is off) and doesn’t require erasing memory as a separate step before writing new data. This apparently boosts the speeds about 30 times. There’s more on this info in this Washington Post article and we are scheduled to see the new chips begin rolling out in 2008. Samsung also rolled out a new 32 gigabit NAND flash memory chip.
Hat tip to jkOnTheRun
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